unisonic technologies co., ltd pzta92/93 pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2012 unisonic technologies co., ltd qw-r207-006.d high voltage transistor ? description the utc pzta92/93 are high voltage pnp transistors, designed for telephone signal switching and for high voltage amplifier. ? features * collector-emitter voltage: v ceo =-300v (utc pzta92) v ceo =-200v (utc pzta93) * complement to utc pzta42/43 * collector power dissipation: p c ( max ) =1w ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 pzta92l-aa3-r PZTA92G-AA3-R sot-223 b c e tape reel pzta93l-aa3-r pzta93g-aa3-r sot-223 b c e tape reel
pzta92/93 pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r207-006.d ? absolute maximum rating (t a =25c) parameter symbol ratings unit collector-base voltage pzta92 v cbo -300 v pzta93 -200 v collector-emitter voltage pzta92 v ceo -300 v pzta93 -200 v emitter-base voltage v ebo -5 v collector current i c -500 ma collector power dissipation pc 1 w junction temperature t j 150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =-100 a, i e =0 pzta92 -300 v pzta93 -200 v collector-emitter breakdown voltage bv ceo i c =-1ma, i b =0 pzta92 -300 v pzta93 -200 v emitter-base breakdown voltage bv ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-200v, i e =0 pzta92 -0.25 a v cb =-160v, i e =0 pzta93 -0.25 a emitter cut-off current i ebo v eb =-3v, i c =0 -0.10 a dc current gain (note) h fe v ce =-10v, i c =-1ma 60 v ce =-10v, i c =-10ma 80 v ce =-10v, i c =-30ma 80 collector-emitter satu ration voltage v ce ( sat ) i c =-20ma, i b =-2ma -0.5 v base-emitter satura tion voltage v be ( sat ) i c =-20ma, i b =-2ma -0.90 v current gain bandwidth product f t v ce =-20v,ic=-10ma, f=100mhz 50 mhz collector base capacitance c cb v cb =-20v, i e =0, f=1mhz pzta92 6 pf pzta93 8 pf note: pulse test: p w < 300 s, duty cycle < 2%, v ce (sat) < 200mv (class sin)
pzta92/93 pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r207-006.d ? typical characteristics collector current, i c (ma) dc current gain collector current, i c (ma) saturation voltage v ce =-10v v ce(sat) v be(sat) i c =10*i b -10 0 -10 1 -10 2 -10 3 -10 4 10 0 10 1 10 2 10 3 -10 0 -10 1 -10 2 -10 3 -10 4 -10 1 -10 2 -10 3 -10 4 collector-base voltage, v cb (v) capacitance c ib c cb collector-emitter voltage, v ce ( v) active-region safe operating area 1.5w thermal limitation t c =2 5 c 625mw thermal limitation t a =25c bonding breakdown limitation t j =150c dc 1 . 0 m s 0 . 1 m s mpsa93 mpsa92 -10 0 -10 1 -10 2 10 1 10 2 -10 -1 -10 0 -10 1 -10 2 -10 3 -10 0 -10 1 -10 1 -10 1 current gain bandwidth product collector current, i c (ma) v ce =-20v f=100mhz 10 1 10 2 10 3 -10 0 -10 1 -10 2
pzta92/93 pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r207-006.d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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